PART |
Description |
Maker |
ISL6444CA ISL6444CA- ISL6444 ISL6444CA-T |
PWM Controller, Dual, VOUT =0.8V-5.5V @ 1%, DDR memory, Broadband Gateway, 300kHz, VIN 4.5V to 28V Dual PWM Controller with DDR Memory Option for Gateway Applications
|
INTERSIL[Intersil Corporation]
|
BR34E02FVT-W BR34E02NUX-W |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
BR34E02NUX-WTR |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
NCP51200 |
3 Amp Source / Sink VTT Termination Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
NCP51190 |
1.5A DDR Memory Termination Regulator
|
ON Semiconductor
|
PM8908 PM8908TR |
Monolithic buck converter for DDR memory termination
|
STMicroelectronics
|
MAX6604AAHA MAX6604AAHAT |
Precision Temperature Monitor for DDR Memory Modules
|
MAXIM - Dallas Semiconductor
|
SES900 SE97 |
DDR memory module temp sensor with integrated SPD, 3.3 V
|
NXP Semiconductors
|
SE97 SE97TL SE97TK SE97TP |
DDR memory module temp sensor with integrated SPD, 3.3 V
|
NXP Semiconductors
|
TPS51116 |
Complete DDR & DDR2 Memory Power From old datasheet system
|
ti
|
ISL6225 ISL6225CA ISL6225CA- |
Dual Mobile-Friendly PWM Controller with DDR Memory Option
|
INTERSIL[Intersil Corporation]
|